Design of Solar Blind Photodetectors for Communication with Green Signal (λ= 0.532µm) in Space. Part II

Shtein, Samson Mil’ and Asthana, Dhawal (2020) Design of Solar Blind Photodetectors for Communication with Green Signal (λ= 0.532µm) in Space. Part II. Journal of Engineering Research and Reports, 19 (2). pp. 20-25. ISSN 2582-2926

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Abstract

The areas of Free Space Optical (FSO) communication and high-speed Visible Light Communication (VLC) offer potential for very high-speed data transmission. Favorable attributes including high frequency and wider bandwidths that can enable transmission speeds of the order 100Gb/s, associated with the visible region of the electromagnetic spectrum make it preferable for allowing communication among satellites and ground stations, under-water communication, etc. However, limitations associated with spectral absorption characteristics of the propagating media have stymied further development of such technologies.

Aims: Commercial lasers operating in red, green and blue lights combined with three photodetectors, each sensitive to selected wavelengths (colors) present basics of long-distance optical communication system. The current study (Part II) depicts the design and operation of a solar-blind photodetector capable to work explicitly with green wavelength of 532nm.

Study Design and Results: The structure of the solar-blind photodetector consists of two sections made of InxGa1-xN (Indium Gallium Nitride) heterostructure, (where x denotes the mole fraction)-a filter and a double barrier tunneling diode. The topmost approximately 1µm thick section acts as a filter and as a p-i-n solar cell providing the required voltage bias to the photodiode. The filter with Eg (Energy Band Gap)=2.33eV absorbs all photons having wavelengths shorter than 532nm. The double barrier tunneling photodiode which comprises the lower section operates with Eg=2.28eV. It consists of an n-type lightly doped quantum well having a width of 2.5nm housed between two lightly doped barriers of 10nm thickness. The 0.12µm topmost and bottom regions of the photodiode are doped with p and n (2×105cm-3) type impurities, respectively. The illuminated cross-section area of the device is finalized at 1mm2.

Item Type: Article
Subjects: Open Archive Press > Engineering
Depositing User: Unnamed user with email support@openarchivepress.com
Date Deposited: 14 Mar 2023 10:30
Last Modified: 18 Mar 2024 04:32
URI: http://library.2pressrelease.co.in/id/eprint/696

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